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SEMICONDUCTOR
TECHNICAL DATA
High frequency rectification (Switching regulators, converters, choppers)
L
KDR505S
SCHOTTKY BARRIER TYPE DIODE
E B
L
FEATURES
Low Forward Voltage : VF max=0.55V.
A G
DIM A
2
MILLIMETERS _ 2.93 + 0.20
1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
Low Leakage Current : IR max=20 A.
3
D
B C D E G H J K
H
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Non-repetitive Peak Surge Current Junction Temperature Storage Temperature
)
SYMBOL VRRM VR IO IFSM Tj Tstg RATING 50 50 0.5 5 125 -55 125 UNIT V V A A
C N
P
P
L M N P
M 3
1. NC 2. ANODE 3. CATHODE
2 1
K
SOT-23
Marking
Lot No. Type Name
DM
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Reverse Voltage Forward Voltage Reverse Current Total Capacitance VR VF IR CT
)
TEST CONDITION IR=200 A IF=0.5A VR=25V VR=10V, f=1MHz MIN. 50 TYP. 22 MAX. 0.55 20 UNIT V V A pF
SYMBOL
2003. 2. 25
Revision No : 1
J
1/2
KDR505S
IR 10 REVERSE CURRENT I R (nA)
4
VR
10 FORWARD CURRENT I F (uA) 10 10 10 10 10 1
6
I F - VF
5
4
10
3
3
2
10
2
0
10
20
30
40
50
0
100
200
300
400
500
600
REVERSE VOLTAGE V R (V)
FORWARD VOLTAGE V F (mV)
CT TERMINAL CAPACITANCE C T (pF) 10
3
VR
10
2
10
0
10
20
30
40
REVERSE VOLTAGE V R (V)
2003. 2. 25
Revision No : 1
2/2

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